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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9907

Title: Rectifying properties and photoresponse of CVD diamond p(i)n-junctions
Authors: HAENEN, Ken
LAZEA, Andrada
NESLADEK, Milos
Koizumi, Satoshi
Issue Date: 2009
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 3(6). p. 208-210
Abstract: The current-voltage characteristics and photoresponse of mesa structured {111}-oriented homoepitaxial CVD diamond p(i)n-junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 10(8) at +/- 10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn-junctions. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Notes: [Haenen, Ken; Lazea, Andrada; Nesladek, Milos] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Haenen, Ken; Lazea, Andrada; Nesladek, Milos] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Koizumi, Satoshi] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan.
URI: http://hdl.handle.net/1942/9907
DOI: 10.1002/pssr.200903155
ISI #: 000270159700022
ISSN: 1862-6254
Category: A1
Type: Journal Contribution
Validation: ecoom, 2010
Appears in Collections: Research publications

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