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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9895

Title: P-doped diamond grown on (110)-textured microcrystalline diamond: growth, characterization and devices
Authors: HAENEN, Ken
LAZEA, Andrada
Barjon, Julien
D'HAEN, Jan
Habka, N.
Teraji, T.
Koizumi, S.
MORTET, Vincent
Issue Date: 2009
Publisher: IOP PUBLISHING
Citation: JOURNAL OF PHYSICS-CONDENSED MATTER, 21(36). (ART N° 364204)
Abstract: The formation and properties of (110)-textured P-doped microcrystalline CVD diamond were studied. Based on several microscopy techniques, with a special emphasis on electron backscattered diffraction, a detailed determination of the grain orientations with respect to the exact [110] axis is given. The different orientations present in the film, in combination with low phosphine concentrations in the gas phase, lead to a variation in P incorporation that can vary over three orders of magnitude, as determined with cathodoluminescence mapping. The role of the surface morphology in the observation of these large incorporation differences is explained. Hall measurements confirm that the films are n-type conductive with a thermal activation energy of 0.56 eV. Based on B-doped substrates, pn junctions were created, showing a rectification ratio of nearly 104 at ± 25 V
Notes: [Invited Article – Special issue on Science’s gem: diamond science 2009 + Front cover J. Phys.-Condens. Mat. 21/36]
URI: http://hdl.handle.net/1942/9895
DOI: 10.1088/0953-8984/21/36/364204
ISI #: 000270523400005
ISSN: 0953-8984
Category: A1
Type: Journal Contribution
Validation: ecoom, 2010
Appears in Collections: Research publications

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