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|Title: ||Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy|
|Authors: ||HARDY, An|
Van Elshocht, S.
VAN DEN RUL, Heidi
VAN BAEL, Marlies
De Gendt, S.
|Issue Date: ||2009|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||APPLIED SURFACE SCIENCE, 255(17). p. 7812-7817|
|Abstract: ||Grazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf4+, Sc3+ and Dy3+ oxides, due to its high surface sensitivity. The (multi) metal oxides studied, are of interest as high-k dielectrics. Important properties affecting the permittivity, such as the amorphous or crystalline phase and interfacial reactions, are characterized. Dy2O3 is prone to silicate formation on SiO2/Si substrates, which is expressed in DyScO3 as well, but suppressed in HfDyOx. Sc2O3, HfScOx and HfO2 were found to be stable in contact with SiO2/Si. Deposition of HfO2 in between Dy2O3 or DyScO3 and SiO2, prevents silicate formation, showing a buffer-like behavior for the HfO2. Doping of HfO2 with Dy or Sc prevents monoclinic phase crystallization. Instead, a cubic phase is obtained, which allows a higher permittivity of the films. The phase remains stable after anneal at high temperature. (c) 2009 Elsevier B.V. All rights reserved.|
|Notes: ||[Hardy, A.; Van den Rul, H.; Van Bael, M. K.; Mullens, J.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Hardy, A.; Van den Rul, H.; Van Bael, M. K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Adelmann, C.; Van Elshocht, S.; De Gendt, S.; Heyns, M.; Kittl, J. A.] IMEC VZW, Heverlee, Belgium. [D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [De Gendt, S.; Heyns, M.] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium.|
|ISI #: ||000266567400061|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2010|
|Appears in Collections: ||Research publications|
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