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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9045

Title: A new method for the lifetime determination of submicron metal interconnects by means of a parallel test structure
Authors: VANSTREELS, Kris
D'OLIESLAEGER, Marc
DE CEUNINCK, Ward
D'HAEN, Jan
Maex, Karen
Issue Date: 2004
Publisher: IEEE
Citation: 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2. p. 633-636.
Abstract: Simulation experiments on both series and parallel electromigration (EM) test structures were carried out under current (or voltage) stress and further analysed by means of the Total Resistance (TR) analysis and a software package "failure" in order to calculate and to compare the behaviour of both EM test structures. These simulation experiments show that the parallel EM test structure is a correct approach for the determination of the failure time of submicron interconnects, the activation energy and the current density exponent n of the thermally driven process, therefore leading to a very substantial reduction of the number of samples that are needed to perform the EM tests.
Notes: Limburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/9045
ISI #: 000222219300132
Category: C1
Type: Proceedings Paper
Validation: ecoom, 2005
Appears in Collections: Research publications

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