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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9015

Title: Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure
Authors: Tiercelin, Nicolas
Talbi, A.
Preobrazhensky, V.
Pernod, P.
MORTET, Vincent
Soltani, A.
Issue Date: 2008
Citation: APPLIED PHYSICS LETTERS, 93(16). p. 162902-...
Abstract: Hybrid giant magnetostrictive-piezoelectric film/film structures exhibiting magnetoelectric (ME) effect associated with a magnetic instability of the spin reorientation transition type are presented. We first present the theoretical study of a clamped beam actuator composed of a piezoelectric layer on a substrate actuated by a magnetostrictive layer. The actuator is a polished 50 mu m thick 18 x 5 mm(2) silicon substrate coated by an electrode, aluminum nitride, and magnetostrictive nanostructured layer. A ME coefficient of 30 V Oe(-1) cm(-1) at a 35 KHz longitudinal resonance was measured. Nonlinear excitation of this mode showed a "nonlinear" dynamic ME coefficient of 4 V Oe(-1) cm(-1). (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001601]
Notes: [Tiercelin, Nicolas; Talbi, A.; Preobrazhensky, V.; Pernod, P.] Ecole Cent Lille, CNRS 8520, IEMN, Joint European Lab,LEMAC, F-59651 Villeneuve Dascq, France. [Mortet, V.; Haenen, K.] Limburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] CNRS 8520, IEMN, F-59651 Villeneuve Dascq, France.
URI: http://hdl.handle.net/1942/9015
DOI: 10.1063/1.3001601
ISI #: 000260383700044
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2009
Appears in Collections: Research publications

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