Document Server@UHasselt >
Education >
Archive >
PhD theses >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8755

Title: Modelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements
Authors: Dreesen, Raf
Advisors: De Schepper, Luc
Issue Date: 2000
Publisher: UHasselt Diepenbeek
Abstract: This thesis deals with the study of the reliability of one specific type of electronic component, the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). MOSFETs have been in use since the beginning of the sixties. They have several advantages: The LOCOS (Local Oxidation of Silicon) isolation enables the separation of devices. The structure has superb scaling possibilities . The use of n-type and p-type devices on the same substrate allows building circuits with complementary MOS structures (CMOS), which results in ultra-low power consumption. These advantages have made the MOSFET the basic building block of semiconductor very-large-scale integration (VLSI) and ultra-large-scale integration (ULSI) products, such as memory cells and microprocessors. ...
URI: http://hdl.handle.net/1942/8755
Category: T1
Type: Theses and Dissertations
Appears in Collections: PhD theses
Research publications

Files in This Item:

Description SizeFormat
N/A14.77 MBAdobe PDF

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.