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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8464

Title: Phosphorous doping of microcrystalline CVD diamond using modified conditions
Authors: HAENEN, Ken
LAZEA, Andrada
MORTET, Vincent
D'HAEN, Jan
Geithner, P
Ristein, J
Issue Date: 2008
Publisher: MATERIALS RESEARCH SOCIETY
Citation: Nebel, CE & Jackman, RB & Nemanich, RJ & Nesladek, M (Ed.) DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS II. p. 49-55.
Series/Report: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Abstract: Phosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation;vas obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.
Notes: Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/8464
ISI #: 000257510500006
ISBN: 978-1-55899-986-2
ISSN: 0272-9172
Category: C1
Type: Proceedings Paper
Validation: ecoom, 2009
Appears in Collections: Research publications

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