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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8131

Title: The use of early resistance and early tcr changes to predict the reliability of on-chip interconnects
Authors: D'Haeger, V
Stulens, Herwig
DE CEUNINCK, Ward
DE SCHEPPER, Luc
Tielemans, L
Gallopyn, G
Depauw P
STALS, Lambert
Issue Date: 1994
Publisher: JOHN WILEY & SONS LTD
Citation: QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL, 10(4). p. 309-314
Abstract: A new method is presented to evaluate the resistance to electromigration of on-chip interconnects. The method is based on the high resolution in-situ electrical resistance technique. During high temperature and high current density stress measurements, two types of processes occur simultaneously: structure-relaxation and electromigration. In order to study these processes separately, the experimental conditions are adapted. The electrical resistance and TCR is measured before and after structure-relaxation and/or electromigration. Using Matthiessen's rule, it is possible to separate the contribution of the resistivity variation from the variation in geometry. The first process causes a decrease of the resistivity, whereas the second causes an increase. The influence of Cu-addition and deposition temperature is also investigated. Correlation of the resistivity variations with conventional mean time to failure (MTTF) data is demonstrated. As a consequence, with our short-time method, predictions of the resistance to electromigration of on-chip interconnects can be made after typical test times of 24 to 48 hours.
Notes: DESTIN NV,B-3590 DIEPENBEEK,BELGIUM. MIETEC ALCATEL,B-9700 OUDENAARDE,BELGIUM.DHAEGER, V, LIMBURGS UNIV CENTRUM,INST MAT RES,DIV MAT PHYS,WETENSCHAPSPK,B-3590 DIEPENBEEK,BELGIUM.
URI: http://hdl.handle.net/1942/8131
DOI: 10.1002/qre.4680100410
ISI #: A1994PU11700009
ISSN: 0748-8017
Type: Journal Contribution
Appears in Collections: Research publications

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