Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7814

Title: Lifetime modeling of intrinsic gate oxide breakdown at high temperature
Authors: MOONEN, Rob
Vanmeerbeek, P
Moens, P.
Boutsen, J
Issue Date: 2007
Citation: MICROELECTRONICS RELIABILITY, 47(9-11). p. 1389-1393
Abstract: High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved.
Notes: Hasselt Univ, Mat Res Inst, Diepenbeek, B-3590 Belgium. AMI Semiconduct Belgium BVBA, Oudenaarde, B-9700 Belgium. IMEC vzw, Div IMOMEC, Diepenbeek, B-3590 Belgium. XIOS Hogesch Limburg, Diepenbeek, B-3590 Belgium.Moonen, R, Hasselt Univ, Mat Res Inst, Wetenschapspk 1, Diepenbeek, B-3590 Belgium.
URI: http://hdl.handle.net/1942/7814
DOI: 10.1016/j.microrel.2007.07.039
ISI #: 000250604600015
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2008
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.