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|Title: ||InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy|
|Authors: ||DE BOECK, Joan|
van Landuyt, J.
|Issue Date: ||1992|
|Citation: ||Applied physics letters, 60(7). p. 868-870|
|Abstract: ||InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 cm2 for InAs/GaAs and 1500 cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95 µm with Johnson noise limited detectivities D* of 7.0×1011 cm Hz1/2/W for InAs/GaAs and 5.8×1011 cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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