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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6519

Title: InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
Authors: DE BOECK, Joan
Dobbelaere, W.
Heremans, P.
Mertens, R.
Borghs, G.
Luyten, W.
van Landuyt, J.
Issue Date: 1992
Citation: Applied physics letters, 60(7). p. 868-870
Abstract: InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 cm2 for InAs/GaAs and 1500 cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95 µm with Johnson noise limited detectivities D* of 7.0×1011 cm Hz1/2/W for InAs/GaAs and 5.8×1011 cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.
URI: http://hdl.handle.net/1942/6519
DOI: 10.1063/1.106490
Type: Journal Contribution
Appears in Collections: Research publications

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