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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6194

Title: Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode
Authors: van Dorpe, P.
Motsnyi, V.F.
Nijboer, M.
Goovaerts, E.
Safarov, V.I.
Das, J
van Roy, W.
Borghs, G.
DE BOECK, Joan
Issue Date: 2003
Publisher: INST PURE APPLIED PHYSICS
Citation: Japanese journal of applied physics, 42(5B). p. L502-L504
Abstract: We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations. of at least 24% at 80 K and 12% at room temperature.
URI: http://hdl.handle.net/1942/6194
DOI: 10.1143/JJAP.42.L502
ISI #: 000183745300003
ISSN: 0021-4922
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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