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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6172

Title: Effect of the diamond nucleation process on freestanding AIN/diamond SAW filter characteristics
Authors: Elmazria, O.
Elhakiki, M.
MORTET, Vincent
Assouar, Mohamed B.
Bouvot, L.
NESLADEK, Milos
Vanecek, M.
Bergonzo, P.
D'OLIESLAEGER, Marc
Alnot, P.
Issue Date: 2003
Publisher: IEEE
Citation: Yuhas, DE & Schneider, SC (Ed.) 2003 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS: vol. 1-2. p. 1746-1749.
Series/Report: ULTRASONICS SYMPOSIUM
Abstract: In this work, the effect of diamond nucleation process on freestanding AIN/diamond SAW device performances were studied. Before diamond deposition, silicon substrates were mechanically nucleated, using an ultrasonic vibration table with sub-micron diamond slurry, and bias enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R-MS=13nm whereas very low surface roughness (as low as R(MS)less than or equal to1 nm) can be achieved on BEN diamond layer. Propagation losses (a) and electromechanical coupling coefficient (K-2) have been measured as a function of the operating frequency and the normalized AN film thickness (kh(AlN)=21pih(AIN)/lambda). Experimental results show that the propagation losses strongly depend on nucleation technique while the electromechanical coupling coefficient slightly depends on nucleation technique.
URI: http://hdl.handle.net/1942/6172
ISI #: 000189492100404
ISBN: 0-7803-7922-5
ISSN: 1051-0117
Category: C1
Type: Proceedings Paper
Appears in Collections: Research publications

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