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|Title: ||InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy|
|Authors: ||Dobbelaere, W.|
DE BOECK, Joan
van Landuyt, J.
|Issue Date: ||1992|
|Citation: ||Applied physics letters, 60(26). p. 3256-3258|
|Abstract: ||We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 µm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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