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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6132

Title: InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
Authors: Dobbelaere, W.
Heremans, P.
Mertens, R.
Borghs, G.
Luyten, W.
van Landuyt, J.
Issue Date: 1992
Citation: Applied physics letters, 60(26). p. 3256-3258
Abstract: We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 µm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.
URI: http://hdl.handle.net/1942/6132
DOI: 10.1063/1.106711
Type: Journal Contribution
Appears in Collections: Research publications

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