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|Title: ||Stress relaxation in Al(Cu) thin films|
|Authors: ||Proost, J.|
COSEMANS, Patrick Peter
|Issue Date: ||1997|
|Publisher: ||Elsevier Science B.V.|
|Citation: ||Microelectronic engineering, 33(1-4). p. 137-147|
|Abstract: ||Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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