Document Server@UHasselt >
Research publications >
Please use this identifier to cite or link to this item:
|Title: ||Electrical spin injection in a ferromagnetic metal/insulator/semiconductor tunnel heterostructure|
|Authors: ||Motsnyi, V.F.|
van Dorpe, P.
van Roy, W.
DE BOECK, Joan
|Issue Date: ||2003|
|Publisher: ||KLUWER ACADEMIC/PLENUM PUBL|
|Citation: ||Journal of superconductivity, 16(4). p. 671-678|
|Abstract: ||We demonstrate experimentally the electrical spin injection from a ferromagnetic metal/tunnel barrier contact into a semiconductor III-V heterostructure. The injected electrons have an in-plane spin orientation. We show that by applying an oblique external magnetic field this spin orientation can be manipulated within the semiconductor, and a nonzero perpendicular spin component arises. This perpendicular component can be easily monitored by optical means (circular polarization of the emitted light). In a CoFe/AlOx/(Al,Ga)As/GaAs heterostructure we observe injected spin polarization in access of 9% at 80 K and optimized structures have recently shown spin injection up to room temperature.|
|ISI #: ||000184875500009|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.