Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/4894

Title: Electrical spin injection in a ferromagnetic metal/insulator/semiconductor tunnel heterostructure
Authors: Motsnyi, V.F.
Safarov, V.I.
van Dorpe, P.
Das, J.
van Roy, W.
Goovaerts, E.
Borghs, G.
Issue Date: 2003
Citation: Journal of superconductivity, 16(4). p. 671-678
Abstract: We demonstrate experimentally the electrical spin injection from a ferromagnetic metal/tunnel barrier contact into a semiconductor III-V heterostructure. The injected electrons have an in-plane spin orientation. We show that by applying an oblique external magnetic field this spin orientation can be manipulated within the semiconductor, and a nonzero perpendicular spin component arises. This perpendicular component can be easily monitored by optical means (circular polarization of the emitted light). In a CoFe/AlOx/(Al,Ga)As/GaAs heterostructure we observe injected spin polarization in access of 9% at 80 K and optimized structures have recently shown spin injection up to room temperature.
URI: http://hdl.handle.net/1942/4894
DOI: 10.1023/A:1025305705087
ISI #: 000184875500009
ISSN: 0896-1107
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.