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|Title: ||Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond|
|Authors: ||Hikavyy, A.|
De Visschere, P.
Butler, J. E.
|Issue Date: ||2007|
|Publisher: ||ELSEVIER SCIENCE SA|
|Citation: ||DIAMOND AND RELATED MATERIALS, 16(4-7). p. 983-986|
|Abstract: ||ZnO thin films were successfully prepared on boron-doped nanocrystalline diamond NCD by means of atomic layer chemical vapour deposition. Their growth and properties are similar to the layers grown by the same technique on glass. The layers thickness can be easily monitored by the number of precursors pulses. The ZnO layers are uniform and have perfect adhesion to NCD. Electrical measurements show that there is no current rectification if highly doped NCD and low resistance ALCVD ZnO are used. On the contrary, a rectifying behaviour can be obtained if lightly boron-doped NCD and resistive hydrothermally prepared ZnO are used. (c) 2006 Elsevier B.V. All rights reserved.|
|Notes: ||Univ Ghent, B-9000 Ghent, Belgium. Hasselt Univ, IMO, Inst Mat Res, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. USN, Res Lab, Washington, DC 20375 USA.Hikavyy, A, Univ Ghent, Krijgslaan 281, B-9000 Ghent, Belgium.Andriy.Hikavvy@imec.be|
|ISI #: ||000246608200067|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2008|
|Appears in Collections: ||Research publications|
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