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|Title: ||Electrostatic force microscopy mapping of electrical conductivity of hydrogen-terminated diamond films|
|Authors: ||Volodin, A.|
Van Haesendonck, C.
|Issue Date: ||2007|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 91(14). p. 142111-...|
|Abstract: ||A method for mapping the surface conductivity of hydrogen-terminated (H-terminated) diamond on a sub-100 nm scale is presented. The measuring technique relies on electrostatic force microscopy imaging of the voltage distribution of a current-carrying H-terminated diamond film. The uniform linear voltage drop in highly conductive H-terminated diamond surface layers indicates that the layers behave as homogeneous, diffusive conductors with a well-defined value of the sheet resistance. On the other hand, we observe conductive as well as insulating regions that coexist for not perfectly H-terminated diamond surfaces with poor electric conductivity. () 2007 American Institute of Physics. (C) 2007 American Institute of Physics.|
|Notes: ||Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, BE-3001 Louvain, Belgium. Hasselt Univ, Mat Res Inst, BE-3590 Diepenbeek, Belgium. IMEC vzw, Div IMOMEC, BE-3590 Diepenbeek, Belgium.Volodin, A, Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, Celestijnenlaan 200 D, BE-3001 Louvain, Belgium.firstname.lastname@example.org|
|ISI #: ||000249974100057|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2008|
|Appears in Collections: ||Research publications|
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