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|Title: ||H2S exposure of a (100)Ge surface: Evidences for a (2x1) electrically passivated surface|
|Authors: ||Houssa, M.|
VAN BAEL, Marlies
Heyns, M. M.
|Issue Date: ||2007|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 90(22). p. 2105-...|
|Abstract: ||The experimental study of the bonding geometry of a (100)Ge surface exposed to H2S in the gas phase at 330 degrees C shows that 1 ML S coverage with (2x1) surface reconstruction can be achieved. The amount of S on the Ge surface and the observed surface periodicity can be explained by the formation of disulfide bridges between Ge-Ge dimers on the surface. First-principles molecular dynamics simulations confirm the preserved (2x1) reconstruction after dissociative adsorption of H2S molecules on a (100)Ge (2x1) surface, and predict the formation of (S-H)-(S-H) inter-Ge dimer bridges, i.e., disulfide bridges interacting via hydrogen bonding. The computed energy band gap of this atomic configuration is shown to be free of surface states, a very important finding for the potential application of Ge in future high performance integrated circuits. (C) 2007 American Institute of Physics.|
|Notes: ||IMEC, B-3001 Louvain, Belgium. Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium. Katholieke Univ Leuven, Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium. Univ Hasselt, Mat Res Inst, Lab Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium.Houssa, M, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.email@example.com|
|ISI #: ||000246909900037|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2008|
|Appears in Collections: ||Research publications|
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