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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/4114

Title: H2S exposure of a (100)Ge surface: Evidences for a (2x1) electrically passivated surface
Authors: Houssa, M.
NELIS, Daniel
Hellin, D.
Pourtois, G.
Conard, T.
Paredis, K.
Vanormelingen, K.
Vantomme, A.
VAN BAEL, Marlies
Caymax, M.
Meuris, M.
Heyns, M. M.
Issue Date: 2007
Citation: APPLIED PHYSICS LETTERS, 90(22). p. 2105-...
Abstract: The experimental study of the bonding geometry of a (100)Ge surface exposed to H2S in the gas phase at 330 degrees C shows that 1 ML S coverage with (2x1) surface reconstruction can be achieved. The amount of S on the Ge surface and the observed surface periodicity can be explained by the formation of disulfide bridges between Ge-Ge dimers on the surface. First-principles molecular dynamics simulations confirm the preserved (2x1) reconstruction after dissociative adsorption of H2S molecules on a (100)Ge (2x1) surface, and predict the formation of (S-H)-(S-H) inter-Ge dimer bridges, i.e., disulfide bridges interacting via hydrogen bonding. The computed energy band gap of this atomic configuration is shown to be free of surface states, a very important finding for the potential application of Ge in future high performance integrated circuits. (C) 2007 American Institute of Physics.
Notes: IMEC, B-3001 Louvain, Belgium. Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium. Katholieke Univ Leuven, Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium. Univ Hasselt, Mat Res Inst, Lab Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium.Houssa, M, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.houssa@imec.be
URI: http://hdl.handle.net/1942/4114
DOI: 10.1063/1.2743385
ISI #: 000246909900037
ISSN: 0003-6951
Category: A1
Type: Journal Contribution
Validation: ecoom, 2008
Appears in Collections: Research publications

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