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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/4106

Title: Aqueous chemical solution deposition - Fast screening method for alternative high-k materials applied to Nd2O3
Authors: Van Elshocht, S.
HARDY, An
Witters, T.
Adelmann, C.
Caymax, M.
Conard, T.
De Gendt, S.
Franquet, A.
Richard, O.
VAN BAEL, Marlies
MULLENS, Jules
Heyns, M.
Issue Date: 2007
Publisher: ELECTROCHEMICAL SOC INC
Citation: ELECTROCHEMICAL AND SOLID STATE LETTERS, 10(4). p. G15-G17
Abstract: Material screening of gate dielectrics for complementary metal oxide semiconductor applications is often complicated by the inability to deposit test samples. We examine the aqueous chemical solution deposition (CSD) technique as a simple, inexpensive, and fast technique to deposit thin metal-oxide layers. We deposited Nd2O3 layers on 1.2 nm SiO2. The thinnest stack (7.2 nm) yielded an equivalent oxide thickness (EOT) of 3.1 nm with a gate-leakage current of 1.4 x 10(-6) A/cm(2) at V-FB - 3 V. EOT scales linearly with physical thickness, allowing a k-value extraction, approximately 14. Our results suggest that aqueous CSD is a viable method for fast gate-dielectrics screening. (c) 2007 The Electrochemical Society.
Notes: IMEC VZW, B-3001 Heverlee, Belgium. Hasselt Univ, Mat Res Inst, Lab Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. Univ Louvain, Dept Chem, B-3001 Heverlee, Belgium. IMEC, B-3590 Diepenbeek, Belgium.Van Elshocht, S, IMEC VZW, B-3001 Heverlee, Belgium.sven.vanelshocht@imec.be
URI: http://hdl.handle.net/1942/4106
DOI: 10.1149/1.2435509
ISI #: 000244071400022
ISSN: 1099-0062
Category: A1
Type: Journal Contribution
Validation: ecoom, 2008
Appears in Collections: Research publications

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