Document Server@UHasselt >
Research publications >
Please use this identifier to cite or link to this item:
|Title: ||ELECTRIC-FIELD RELAXATION IN PROLONGED-TIME PHOTOCURRENT EXPERIMENTS|
|Authors: ||SCHAUER, F|
|Issue Date: ||1993|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||JOURNAL OF NON-CRYSTALLINE SOLIDS, 166. p. 505-508|
|Abstract: ||The influence of the progressive electric field relaxation on the transient photocurrent for intrinsic and B-doped a-Si:H samples is investigated. The photocurrent measurements are compared with the voltage sweep-out experiments and with mathematical simulations of the photocurrent obtained from the numerical solution of the multiple trapping model. Beyond the dielectric relaxation a current due to the charge release from deep traps is identified.|
|Notes: ||TECH ACAD BRNO,DEPT PHYS,CS-60200 BRNO,CZECH REPUBLIC.NESLADEK, M, LIMBURGS UNIV CENTRUM,INST MAT RES,DIV MAT PHYS,CAMPUSLAAN,B-3590 DIEPENBEEK,BELGIUM.|
|ISI #: ||A1993MT01200123|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.