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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3690

Title: TRANSIENT SPACE-CHARGE-LIMITED CURRENTS - THE TIME-OF-FLIGHT AND POST-TRANSIT ANALYSIS IN HYDROGENATED AMORPHOUS-SILICON
Authors: SCHAUER, F
ELIAT, A
NESLADEK, Milos
Adriaenssens, G.J.
Issue Date: 1994
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 64(22). p. 3009-3011
Abstract: Through evaluation of the post-transit part of the transient space-charge-limited currents (SCLC), it becomes possible to determine the hydrogenated amorphous silicon (a-Si:H) density of localized states (DOS) over a wide range of energies. The use of SCLC conditions results in the enhancement of the occupation of the deep states and hence in the corresponding increase of the signal. In combination with standard SCLC time-of-flight, and since it can be used for both electrons and holes, the method is suitable for the elucidation of the complete DOS distribution, for the examination of the emission times of deep traps, and for the determination of carrier drift mobilities, all on the same p-i-n structure (which may be a standard solar cell).
Notes: TECH UNIV BRNO,FAC CHEM,DEPT PHYS,CS-60200 BRNO,CZECH REPUBLIC. LIMBURGS UNIV CENTRUM,DIV MAT PHYS,B-3590 DIEPENBEEK,BELGIUM.SCHAUER, F, KATHOLIEKE UNIV LEUVEN,DEPT PHYS,CELESTIJNENLAAN 200D,B-3001 HEVERLEE,BELGIUM.
URI: http://hdl.handle.net/1942/3690
ISI #: A1994NN75200033
ISSN: 0003-6951
Type: Journal Contribution
Appears in Collections: Research publications

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