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|Title: ||TRANSIENT SPACE-CHARGE-LIMITED CURRENTS - THE TIME-OF-FLIGHT AND POST-TRANSIT ANALYSIS IN HYDROGENATED AMORPHOUS-SILICON|
|Authors: ||SCHAUER, F|
|Issue Date: ||1994|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 64(22). p. 3009-3011|
|Abstract: ||Through evaluation of the post-transit part of the transient space-charge-limited currents (SCLC), it becomes possible to determine the hydrogenated amorphous silicon (a-Si:H) density of localized states (DOS) over a wide range of energies. The use of SCLC conditions results in the enhancement of the occupation of the deep states and hence in the corresponding increase of the signal. In combination with standard SCLC time-of-flight, and since it can be used for both electrons and holes, the method is suitable for the elucidation of the complete DOS distribution, for the examination of the emission times of deep traps, and for the determination of carrier drift mobilities, all on the same p-i-n structure (which may be a standard solar cell).|
|Notes: ||TECH UNIV BRNO,FAC CHEM,DEPT PHYS,CS-60200 BRNO,CZECH REPUBLIC. LIMBURGS UNIV CENTRUM,DIV MAT PHYS,B-3590 DIEPENBEEK,BELGIUM.SCHAUER, F, KATHOLIEKE UNIV LEUVEN,DEPT PHYS,CELESTIJNENLAAN 200D,B-3001 HEVERLEE,BELGIUM.|
|ISI #: ||A1994NN75200033|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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