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|Title: ||Defect-induced optical absorption in CVD diamond films|
|Authors: ||NESLADEK, Milos|
|Issue Date: ||1996|
|Publisher: ||AKADEMIE VERLAG GMBH|
|Citation: ||PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1). p. 283-303|
|Abstract: ||Photothermal deflection spectroscopy (PDS) was used to study defect-induced optical absorption in CVD diamond films. PDS has shown very high sensitivity, allowing to measure absorbance values down to 10(-5) level. Moreover, PDS is significantly less sensitive to elastic light scattering than optical transmission measurements. Based on PDS data, it is shown that undoped polycrystalline and homoepitaxial diamond Films exhibit a very characteristic subgap absorption, which is ascribed to electronic transitions between pi --> pi* states, appearing in the gap and due to the presence of amorphous carbon. The incorporation of N (and H and O) atoms in diamond films was studied. The optical absorption of N-doped films is compared with the optical absorption due to single substitutional N in Ib synthetic diamond. The incorporation of Li by in-situ doping with organo-metallic compounds during Film growth is discussed and the observed transitions are tentatively explained. Finally, a mathematical model for the characteristic subgap absorption is described and the experimentally obtained optical absorption coefficients are deconvoluted to obtain parameters for the description of the density of gap states.|
|Notes: ||ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE,CZECH REPUBLIC.Nesladek, M, LIMBURGS UNIV CENTRUM,INST MAT RES,DIV MAT PHYS,WETENSCHAPSPARK 1,B-3590 DIEPENBEEK,BELGIUM.|
|ISI #: ||A1996UE16100020|
|Type: ||Journal Contribution|
|Appears in Collections: ||Research publications|
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