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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3448

Title: Defect-induced optical absorption in CVD diamond films
Authors: NESLADEK, Milos
Vanecek, M
STALS, Lambert
Issue Date: 1996
Publisher: AKADEMIE VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1). p. 283-303
Abstract: Photothermal deflection spectroscopy (PDS) was used to study defect-induced optical absorption in CVD diamond films. PDS has shown very high sensitivity, allowing to measure absorbance values down to 10(-5) level. Moreover, PDS is significantly less sensitive to elastic light scattering than optical transmission measurements. Based on PDS data, it is shown that undoped polycrystalline and homoepitaxial diamond Films exhibit a very characteristic subgap absorption, which is ascribed to electronic transitions between pi --> pi* states, appearing in the gap and due to the presence of amorphous carbon. The incorporation of N (and H and O) atoms in diamond films was studied. The optical absorption of N-doped films is compared with the optical absorption due to single substitutional N in Ib synthetic diamond. The incorporation of Li by in-situ doping with organo-metallic compounds during Film growth is discussed and the observed transitions are tentatively explained. Finally, a mathematical model for the characteristic subgap absorption is described and the experimentally obtained optical absorption coefficients are deconvoluted to obtain parameters for the description of the density of gap states.
Notes: ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE,CZECH REPUBLIC.Nesladek, M, LIMBURGS UNIV CENTRUM,INST MAT RES,DIV MAT PHYS,WETENSCHAPSPARK 1,B-3590 DIEPENBEEK,BELGIUM.
URI: http://hdl.handle.net/1942/3448
ISI #: A1996UE16100020
ISSN: 0031-8965
Type: Journal Contribution
Appears in Collections: Research publications

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