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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3373

Title: Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry
Authors: COSEMANS, Patrick Peter
D'OLIESLAEGER, Marc
DE CEUNINCK, Ward
DE SCHEPPER, Luc
STALS, Lambert
Issue Date: 1996
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS AND RELIABILITY, 36(11-12). p. 1699-1702
Abstract: The general goal of this work is to get a better insight in the different microstructural processes taking place in blanket Al(Si)(Cu) metallisations under variable conditions. Using analytical transmission electron microscopy and secondary ion mass spectrometry stable theta-CuAl2 precipitates are found distributed inhomogeneously in the z-direction of the metallisation with a peak near the substrate side of the metallisation. Additional heating creates larger theta-CuAl2 precipitates distributed inhomogeneously in the z-direction with a peak near the surface of the metallisation as well as in the vicinity of the substrate. Copyright (C) 1996 Elsevier Science Ltd
Notes: Cosemans, P, LIMBURGS UNIV CTR,INST MAT RES,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPK 1,B-3590 DIEPENBEEK,BELGIUM.
URI: http://hdl.handle.net/1942/3373
DOI: 10.1016/0026-2714(96)00177-1
ISI #: A1996VN50200022
ISSN: 0026-2714
Type: Journal Contribution
Appears in Collections: Research publications

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