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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3230

Title: Simultaneous characterization of defect states in CVD diamond by PDS, EPR, Raman and photocurrent spectroscopies
Authors: Rosa, J
Pangrac, J
Vanecek, M
Vorlicek, V
MEYKENS, Kristien
STALS, Lambert
Issue Date: 1998
Citation: DIAMOND AND RELATED MATERIALS, 7(7). p. 1048-1053
Abstract: The assessment of the quality of CVD diamond films, a very important issue for the preparation of electronics-quality material, has been approached with the help of Raman, luminescence and photocurrent spectroscopy, photothermal deflection spectroscopy (PDS) and electron paramagnetic resonance (EPR). In heteroepitaxial diamond films deposited on silicon wafers by plasma-enhanced chemical vapour deposition (PECVD) we have observed the following defects: sp(2) bonded carbon, carbon dangling bonds, nitrogen and silicon. Raman scattering is sensitive to sp(2) bonded carbon, PDS sees total absorption due to sp(2) bonded carbon, dangling bonds and nitrogen. Typically, the graphitic inclusions between the grains dominate the PDS spectrum. EPR detects carbon dangling bonds (vacancy-like defect, with possible H involvement) with g = 2.0028 and paramagnetic form of nitrogen with g = 2.0024. A strong photoluminescence peak at 1.68 eV reflects the Si contamination, Nitrogen-related transitions were detected by photocurrent measurement, with a characteristic threshold at about 2.1 eV, and seen in luminescence. A threshold energy of approximately 1 eV was attributed to the carbon dangling bond defect, which was observed also by EPR. This g = 2.0028 signal decreases with an increase in material quality, as determined by Raman spectra. (C) 1998 Elsevier Science S.A.
Notes: Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague 6, Czech Republic. Acad Sci Czech Republ, Inst Phys, CZ-18040 Prague, Czech Republic. Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium.Vanecek, M, Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague 6, Czech Republic.
URI: http://hdl.handle.net/1942/3230
DOI: 10.1016/S0925-9635(98)00155-1
ISI #: 000074651300020
ISSN: 0925-9635
Type: Journal Contribution
Validation: ecoom, 1999
Appears in Collections: Research publications

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