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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3130

Title: Stress relaxation in Al-Cu and Al-Si-Cu thin films
Authors: Witvrouw, A
Proost, J
Roussel, P
COSEMANS, Patrick Peter
Maex, K
Issue Date: 1999
Citation: JOURNAL OF MATERIALS RESEARCH, 14(4). p. 1246-1254
Abstract: Substrate curvature measurements were used to study stress changes during thermal cycling and isothermal tensile stress relaxation in 800 nm Al-0,5 wt% Cu and Al-l wt% Si-0.5 wt% Cu films. For both compositions dislocation glide can describe the relaxation data well for temperatures up to 120 degrees C for Al-Si-Cu and up to 100 degrees C for Al-Cu. The average activation energy for Al-Si-Cu and Al-Cu is 1.7 +/- 0.2 eV and 3.0 +/- 0.3 eV, respectively. The athermal flow stress is the same for both and equal to 600 +/- 200 MPa. This result is consistent with the obstacles for glide being Al2Cu precipitates, which, in the case of Al-Si-Cu, are fine and can be cut by the dislocations, and, in the case of Al-Cu, are strong and provide Orowan strengthening. Also, the stress changes during thermal cycling in the Al-Cu films are different from these in the Al-Si-Cu films. For Al-Cu films, the room temperature stress decreases after each thermal cycle, while for Al-Si-Cu stress changes during thermal cycling are stable from the second cycle on. These observations are supported by thorough transmission electron microscopy (TEM) studies.
Notes: IMEC, B-3001 Louvain, Belgium. Limburgs Univ Ctr, Div Mat Phys, B-3590 Diepenbeek, Belgium.Witvrouw, A, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.
URI: http://hdl.handle.net/1942/3130
ISI #: 000082550400016
ISSN: 0884-2914
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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