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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3125

Title: The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique
Authors: VAN OLMEN, Jan
D'Haeger, V
Witvrouw, A
Maex, K
Vandevelde, B
Beyne, E
Tielemans, L
Issue Date: 1999
Citation: MICROELECTRONICS RELIABILITY, 39(11). p. 1657-1665
Abstract: Compared with traditional test techniques, the in-situ high resolution resistometric technique allows a sensitive monitoring of thin film metallisations submitted to 'realistic' current stress levels and reveals the occurrence of distinct reversible and irreversible processes. A review is provided of the processes observed in metallisations submitted to three regions of current stress: no current stress, low current density stress (j < 0.5 MA/cm(2)) and 'high' current density stress (j > 0.5 MA/cm(2)). Discarding the contributions of the concurrent, temperature induced, masking mechanisms results in an accurate observation of the kinetics of the early stages of electromigration, revealing fundamental features such as incubation time, subsequent linear resistance increase and current and temperature dependence. (C) 1999 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium.Van Olmen, J, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/3125
DOI: 10.1016/S0026-2714(99)00168-7
ISI #: 000084305000014
ISSN: 0026-2714
Type: Journal Contribution
Validation: ecoom, 2001
Appears in Collections: Research publications

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