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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3059

Title: Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond
Authors: NESLADEK, MilosTeraji, T
MEYKENS, Kristien
STALS, Lambert
Teraji, T
Koizumi, S
Issue Date: 1999
Citation: DIAMOND AND RELATED MATERIALS, 8(2-5). p. 882-885
Abstract: A low-temperature spectroscopic study of epitaxial phosphorus-doped n-type CVD diamond films deposited on a type-Ia diamond crystal, was been carried out using the constant photocurrent method (CPM). Two new defect levels in the gap of CVD diamond were detected. A numerical fitting of the optical cross-section data positions the first level, here denoted X-P1, at an optical excitation energy of 0.55 eV. The second level, denoted X-P2, is positioned at about 0.8 eV. The 0.55 eV energy obtained from the fitting procedure is in good agreement with Hall measurements of the activation energy of the carrier concentration for low P-doped samples. SIMS measurement shows a concentration of about 1 part per million (ppm) of phosphorus in the film. (C) 1999 Elsevier Science S.A, All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Natl Inst Res Inorgan Mat, Res Ctr Adv Mat, Tsukuba, Ibaraki 305, Japan.Nesladek, M, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenscapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/3059
DOI: 10.1016/S0925-9635(98)00291-X
ISI #: 000080437000151
ISSN: 0925-9635
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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