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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3058

Title: Photoionization cross-section of dominant defects in CVD diamond
Authors: Rosa, J
Vanecek, M
STALS, Lambert
Issue Date: 1999
Citation: DIAMOND AND RELATED MATERIALS, 8(2-5). p. 721-724
Abstract: Main defects in the gap of free standing optical-quality CVD diamond have been investigated with the help of electron paramagnetic resonance (EPR) and the constant photocurrent method (CPM). The EPR and CPM measurements reveal well-defined substitutional nitrogen defect state in the gap with a photoionization energy E-i = 2.2 eV. Another set of defect states comes from the presence of hydrogen. CPM shows a significant effect of the hydrogenation, which generates a bulk defect with a photoionization energy E-i = 1.2 eV in the gap of CVD diamond. Annealing studies after hydrogenation show that this defect is not responsible for p-type surface conductivity of diamond, because it is thermally stable even at 930 degrees C but the surface conductivity vanishes at much lower temperatures. The EPR resonances in the g congruent to 2.0028 region are also investigated as a function of hydrogenation and oxidation. (C) 1999 Elsevier Science S.A. All rights reserved.
Notes: Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic. Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium.Rosa, J, Acad Sci Czech Republ, Inst Phys, Cukrovarnicka 10, Prague 16253 6, Czech Republic.
URI: http://hdl.handle.net/1942/3058
DOI: 10.1016/S0925-9635(98)00354-9
ISI #: 000080437000120
ISSN: 0925-9635
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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