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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3056

Title: Low-temperature spectroscopic study of n-type diamond
Authors: NESLADEK, Milos
MEYKENS, Kristien
HAENEN, Ken
STALS, Lambert
Teraji, T
Koizumi, S
Issue Date: 1999
Publisher: AMERICAN PHYSICAL SOC
Citation: PHYSICAL REVIEW B, 59(23). p. 14852-14855
Abstract: A spectroscopic study of epitaxial phosphorus-doped n-type diamond films, prepared by the chemical vapor deposition (CVD) technique, was carried out using the constant photocurrent method (CPM). Liquid nitrogen temperature CPM data show two new optically active defects in the gap of the P-doped CVD diamond film. A theoretical fitting of the optical cross-section data yields 0.56 eV optical excitation energy for the first level (denoted as X-P1) and 0.81 eV for the second level (denoted as X-P2) The X-P1 optical data are in good agreement with Hall measurements, showing about the same value for the (thermal) activation energy of the carrier concentration for P-doped samples. The X-P2-defect level remains unidentified. Liquid helium temperature measurements for a high-electrical mobility n-type diamond sample show P-related oscillatory photoconductivity.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan.Nesladek, M, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/3056
DOI: 10.1103/PhysRevB.59.14852
ISI #: 000081134500009
ISSN: 0163-1829
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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