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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3053

Title: Stability of PPV based light emitting diodes
Authors: Nguyen, TP
Garnier, A
Chen, LC
De Kok, M
Tran, VH
Issue Date: 1999
Citation: SYNTHETIC METALS, 102(1-3). p. 1097-1098
Abstract: The electrical characteristics of PPV based light emitting diodes were studied as a function of their working time. The degradation of the diodes was observed through a decrease of the current density together with an increase of the turn on voltage. Analysis of the J-F characteristics showed that the conduction mechanism in the diodes did not change but the decrease in the light emission was essentially due to the dark spot formation on the surface of the degraded diodes. Observed by scanning electron microscopy, the dark spots appeared to be distributed in circular configurations, except on the edge of the degraded surface. Oxygen was found inside the spots and may be an important factor of the failure process.
Notes: Inst Mat Nantes, Lab Phys Cristalline, F-44072 Nantes 03, France. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. CNRS, Lab Mat Organ Proprietes Specif, F-69390 Vernaison, France.Nguyen, TP, Inst Mat Nantes, Lab Phys Cristalline, 2 Rue de la Houssiniere, F-44072 Nantes 03, France.
URI: http://hdl.handle.net/1942/3053
DOI: 10.1016/S0379-6779(98)01384-8
ISI #: 000081056400111
ISSN: 0379-6779
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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