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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3048

Title: Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study
Authors: NESLADEK, Milos
MEYKENS, Kristien
STALS, Lambert
Stesmans, A
Iakoubovskij, K
Rosa, J
Vanecek, M
Issue Date: 1999
Citation: DIAMOND AND RELATED MATERIALS, 8(8-9). p. 1480-1484
Abstract: Constant photocurrent method (CPM), electron paramagnetic resonance (EPR), and infra-red optical absorption (FTIR) techniques are used to study characteristic defects in the gap of free-standing optical-quality CVD diamond. It is shown that the gap density of states (DOS) is very sensitive to oxidation, hydrogenation and annealing treatments. The room-temperature (RT) EPR and CPM measurements reveal a well-defined single substitutional nitrogen defect (P1). The photoionization energy of this defect is E-i = 2.2 eV. The presence of another defect state, denoted previously as D1 (E-i = 1.2 eV) is discussed. This (D1) defect level is stable up to high annealing temperatures. The changes observed in the EPR spectra after oxidation/hydrogenation are discussed. IR absorption in the CH-stretch band and in one-phonon absorption regions is investigated. (C) 1999 Elsevier Science S.A. All rights reserved.
Notes: Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res, B-3590 Diepenbeek, Belgium. Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium. Acad Sci Czech Republ, Inst Phys, Prague 6, Czech Republic.Nesladek, M, Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/3048
DOI: 10.1016/S0925-9635(99)00072-2
ISI #: 000081933800023
ISSN: 0925-9635
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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