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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3015

Title: Study of defects in CVD and ultradisperse diamond
Authors: Iakoubovskii, K
Adriaenssens, G.J.
MEYKENS, Kristien
Vul, AY
Osipov, VY
Issue Date: 1999
Citation: DIAMOND AND RELATED MATERIALS, 8(8-9). p. 1476-1479
Abstract: Characterization of defects in chemical vapor deposition (CVD) and detonation synthesis ultradisperse diamond (UDD) is reported. Electron Spin Resonance, Raman, and photothermal deflection spectroscopies show that sp(2)-bonded carbon is a dominant defect in UDD diamond. Although UDD was made from trinitrotoluene, no substitutional nitrogen was detected. Photoluminescence (PL) from CVD films showed narrow lines at 1.68, 1.945 and 2.156 eV, in addition to broad red and green bands, while only a blue band was observed in UDD samples. On the basis of PL excitation measurements, the green band in CVD diamond is attributed to donor-acceptor pair recombination. On the basis of a spatial variation of PL intensity in CVD films, the incorporation mechanism for silicon, nitrogen, and boron atoms is discussed. The Manuscript Prime Novelty statement: It is shown that sp(2) carbon is a dominant defect in diamond obtained by detonation technique from trinitrotoluene, while no substitutional nitrogen was detected. The green band in CVD diamond is proved to originate from donor-acceptor pair recombination. (C) 1999 Elsevier Science S.A. All rights reserved.
Notes: Katholieke Univ Leuven, Lab Halgeleiderfys, B-3001 Heverlee, Belgium. Univ Limburg, Inst Mat Res, B-3590 Diepenbeek, Belgium. AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia.Iakoubovskii, K, Katholieke Univ Leuven, Lab Halgeleiderfys, Celestijnenlaan 200D, B-3001 Heverlee, Belgium.
URI: http://hdl.handle.net/1942/3015
DOI: 10.1016/S0925-9635(99)00071-0
ISI #: 000081933800022
ISSN: 0925-9635
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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