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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2973

Title: Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.
Authors: DREESEN, Raf
CROES, Kristof
MANCA, Jean
DE CEUNINCK, Ward
DE SCHEPPER, Luc
Pergoot, A
Groeseneken, G
Issue Date: 1999
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790
Abstract: By using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2973
DOI: 10.1016/S0026-2714(99)00101-8
ISI #: 000082838700010
ISSN: 0026-2714
Type: Journal Contribution
Validation: ecoom, 2000
Appears in Collections: Research publications

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