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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2906

Title: Electronic states of phosphorus in diamond
Authors: Gheeraert, E.
Koizumi, S.
Teraji, T.
Kanda, H.
Nesladek, Milos
Issue Date: 2000
Publisher: ELSEVIER SCIENCE SA
Citation: DIAMOND AND RELATED MATERIALS, 9(3-6). p. 948-951
Abstract: A set of rt-type diamond thin films was investigated by infra-red absorption spectroscopy. The films were grown by CVD on {111} synthetic diamond, and phosphorus-doped using [P]/[C] = 100-5000 ppm of phosphine in the gas phase during growth. The phosphorus concentration in the films ranged from around 5 x 10(17) cm(-3) to 2 x 10(19) cm(-3). A continuum of absorption, attributed to the photoionisation of neutral phosphorus, is observed together with two peaks at 523 and 562 meV attributed to electronic transitions from the ground level of phosphorus to its first and second excited states. The energy difference between these two peaks is in agreement with the effective mass approximation applied for the rt-type diamond, suggesting that phosphorus behaves like a shallow level centre. Assuming that phosphorus is a perfect shallow level, the optical ionisation energy of 600 meV (+/- 20 meV) is deduced, consistent with the thermal activation energy. (C) 2000 Elsevier Science S.A. All rights reserved.
Notes: NIRIM, Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan. Limburgs Univ Ctr, Mat Res Inst, Div Mat Phys, B-3590 Diepenbeek, Belgium. CNRS, Etud Proprietes Elect Solides Lab, LEPES, F-38042 Grenoble, France.Gheeraert, E, NIRIM, Natl Inst Res Inorgan Mat, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan.
URI: http://hdl.handle.net/1942/2906
DOI: 10.1016/S0925-9635(99)00225-3
ISI #: 000087382400144
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2001
Appears in Collections: Research publications

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