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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/28829

Title: Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation
Authors: Xu, Menglei
Bearda, Twan
Filipic, Miha
Radhakrishnan, Hariharsudan Sivaramakrishnan
Gordon, Ivan
Szlufcik, Jozef
Poortmans, Jef
Issue Date: 2018
Publisher: ELSEVIER SCIENCE BV
Citation: SOLAR ENERGY MATERIALS AND SOLAR CELLS, 186, p. 78-83
Abstract: In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm(2) SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.
Notes: [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Xu, Menglei; Bearda, Twan; Filipic, Miha; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] Imec, Kapeldreef 75, B-3001 Heverlee, Belgium. [Poortmans, Jef] Hasselt Univ, B-3500 Hasselt, Belgium.
URI: http://hdl.handle.net/1942/28829
DOI: 10.1016/j.solmat.2018.06.027
ISI #: 000441491100010
ISSN: 0927-0248
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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