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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/28784

Title: Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration
Authors: Lloret, Fernando
Araujo, Daniel
Eon, David
Bustarret, Etienne
Issue Date: 2018
Citation: CRYSTAL GROWTH & DESIGN, 18(12), p. 7628-7632
Abstract: The overgrowth of {100}-oriented patterned diamond substrates by microwave plasma enhanced chemical vapor deposition was studied by transmission electron microscopy through a stratigraphic approach. A sector-like growth behavior is evidenced, resulting from a competition between slowly growing facets at protruding (top) corners and edges against quickly growing facets at recessing (bottom) corners. Depending on the pattern orientation and height, under some particular experimental conditions, it is possible to predict the sequence of growth sectors, and thus to choose the crystallographic orientation of the overgrown surface, by stopping the growth at the right stage. A simple two-dimensional model is provided, allowing the fabrication of structures adapted to the requirements of specific electronic devices.
Notes: [Lloret, Fernando] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Lloret, Fernando] IMOMEC, IMEC Vzw, B-3590 Diepenbeek, Belgium. [Lloret, Fernando; Araujo, Daniel] Univ Cadiz, Dept Ciencia Mat, Cadiz 11510, Spain. [Eon, David; Bustarret, Etienne] Univ Grenoble Alpes, CNRS, Inst Neel, F-38000 Grenoble, France.
URI: http://hdl.handle.net/1942/28784
DOI: 10.1021/acs.cgd.8b01424
ISI #: 000452694000045
ISSN: 1528-7483
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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