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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/28767

Title: Selective deposition of a-Si:H: a proof-of-concept study
Authors: Xu, Menglei
Bearda, Twan
Hasan, Mahmudul
Radhakrishnan, Hariharsudan Sivaramakrishnan
Gordon, Ivan
Szlufcik, Jozef
Poortmans, Jef
Issue Date: 2018
Publisher: IEEE
Citation: 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE,p. 3148-3151
Series/Report: World Conference on Photovoltaic Energy Conversion WCPEC
Abstract: We present a novel approach to simplify the rearside a-Si:H patterning of silicon heterojunction interdigitated back-contact solar cells. In our current process, laser ablation and lift-off are used. Since lift-off is not industrially-viable, we propose to replace it with a selective deposition process which ensures a-Si: H is realised only on c-Si surface and not on the SiOx mask, at the end of the process, based on cycles of a-Si: H deposition and etching. While neither the deposition nor the etching is truly selective, this method relies on the difference of a-Si: H etch rates on c-Si and SiOx surfaces to achieve selectivity as the net end-result. The main challenge is addressing the trade-off between selectivity and c-Si surface passivation.
Notes: [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, Kasteelpk,Arenberg 10, B-3001 Heverlee, Belgium. [Xu, Menglei; Bearda, Twan; Hasan, Mahmudul; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. [Poortmans, Jef] Univ Hasselt, Martelarenlaan 42, B-3500 Hasselt, Belgium.
URI: http://hdl.handle.net/1942/28767
DOI: 10.1109/PVSC.2018.8547827
ISI #: 000469200403043
ISBN: 9781538685297
ISSN: 2159-2330
Category: C1
Type: Proceedings Paper
Appears in Collections: Research publications

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