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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/28448

Title: A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell
Authors: Suresh, Sunil
de Wild, Jessica
Kohl, Thierry
Buldu, Dilara
Brammertz, Guy
Meuris, Marc
Poortmans, Jef
Isabella, Olindo
Zeman, Miro
Vermang, Bart
Issue Date: 2019
Citation: THIN SOLID FILMS, 669(2019), p. 399-403
Abstract: Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.
URI: http://hdl.handle.net/1942/28448
Link to publication: https://explore.openaire.eu/search/publication?articleId=od______2659::e8ddcf638f849035e1bd43146a527c4a
DOI: 10.1016/j.tsf.2018.11.027
ISI #: 000453405600056
ISSN: 0040-6090
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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