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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/27953

Title: Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review
Authors: Birant, Gizem
de Wild, Jessica
Meuris, Marc
Poortmans, Jef
Vermang, Bart
Issue Date: 2019
Citation: Applied Sciences-Basel, 9(4) (Art N° 677)
Abstract: This review summarizes all studies which used dielectric-based materials as a passivation layer at the rear surface of copper indium gallium (di)selenide, Cu(In,Ga)Se2, (CIGS)-based thin film solar cells, up to 2019. The results regarding the kind of dielectric materials, the deposition techniques, contacting approaches, the existence of additional treatments, and current–voltage characteristics (J–V) of passivated devices are emphasized by a detailed table. The techniques used to implement the passivation layer, the contacting approach for the realization of the current flow between rear contact and absorber layer, additional light management techniques if applicable, the solar simulator results, and further characterization techniques, i.e., external quantum efficiency (EQE) and photoluminescence (PL), are shared and discussed. Three graphs show the difference between the reference and passivated devices in terms of open-circuit voltage (Voc), short-circuit current (Jsc), and efficiency (η), with respect to the thicknesses of the absorber layer. The effects of the passivation layer at the rear surface are discussed based on these three graphs. Furthermore, an additional section is dedicated to the theoretical aspects of the passivation mechanism.
Notes: Birant, G (reprint author), Hasselt Univ, Inst Mat Res IMO, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium. IMOMEC Partner Solliance, Imec Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. Energyville, Thor Pk 8320, B-3600 Genk, Belgium. gizem.birant@imec.be; Jessica.deWild@imec.be; Marc.Meuris@imec.be; Jef.Poortmans@imec.be; bart.vermang@imec.be
URI: http://hdl.handle.net/1942/27953
DOI: 10.3390/app9040677
ISI #: 000460696500063
ISSN: 2076-3417
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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