www.uhasselt.be
DSpace

Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2782

Title: Copper deposition and subsequent grain structure evolution in narrow lines
Authors: Brongersma, SH
D'HAEN, Jan
VANSTREELS, Kris
DE CEUNINCK, Ward
Vervoort, I
Maex, K
Issue Date: 2003
Publisher: TRANS TECH PUBLICATIONS LTD
Citation: THERMEC'2003, PTS 1-5. p. 2485-2490.
Series/Report: MATERIALS SCIENCE FORUM
Abstract: Electroplated copper has become the method of choice for filling narrow interconnect features in the back-end-of-line processing for microelectronics applications. Through the use of additives a void free deposit can be obtained by inducing a filling from the bottom up. However, the accompanying sub-critical grain size results in a recrystallization that proceeds even at room temperature. This process is strongly dependent on plating conditions and the additives used. The resulting differences are studied through line resistivity and real-time SEM grain growth monitoring at elevated temperatures. The present understanding and our efforts to improve it are presented.
Notes: IMEC, B-3001 Heverlee, Belgium. IMOMEC, B-3590 Diepenbeek, Belgium. Katholieke Univ Leuven, EE Dept, Louvain, Belgium.Brongersma, SH, IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium.
URI: http://hdl.handle.net/1942/2782
ISI #: 000183626400398
ISSN: 0255-5476
Category: C1
Type: Proceedings Paper
Validation: ecoom, 2004
Appears in Collections: Research publications

Files in This Item:

There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.