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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/27686

Title: Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
Authors: Simoen, Eddy
Radhakrishnan, Hariharsudan Sivaramakrishnan
Uddin, Md Gius
Gordon, Ivan
Poortmans, Jef
Wang, Chong
Li, Wei
Issue Date: 2018
Citation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(4) (Art N° 041201)
Abstract: This paper compares the electrically active damage in dry-etched n-type float-zone silicon, using NF3/Ar or H-2-plasma exposure and assessed by deep-level transient spectroscopy (DLTS) and recombination lifetime analysis. It is shown that the NF3/Ar-plasma damage consists of at least four different types of electron traps in the upper half of the band gap, which can be associated with vacancy-and vacancy-impurity-related complexes. In the case of H-2-plasma damage, it is believed that the accumulation of point defects results in a gradual disordering of the near-surface layer. These defect levels also act as recombination centers, judged by the fact that they degrade the minority carrier lifetime. It is finally shown that lifetime measurements are more sensitive to the etching-induced damage than DLTS.
Notes: [Simoen, Eddy; Radhakrishnan, Hariharsudan Sivaramakrishnan; Uddin, Md Gius; Gordon, Ivan; Poortmans, Jef] Imec, Kapeldreef 75, B-3001 Leuven, Belgium. [Wang, Chong; Li, Wei] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China. [Simoen, Eddy] Univ Ghent, Dept Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium. [Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Poortmans, Jef] Univ Hasselt, Campus Diepenbeek,Agoralaan Gebouw D, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/27686
DOI: 10.1116/1.5026529
ISI #: 000440045700014
ISSN: 1071-1023
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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