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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2738

Title: Phonon-assisted electronic transitions in phosphorus-doped n-type chemical vapor deposition diamond films
Authors: HAENEN, Ken
MEYKENS, Kristien
KNUYT, Gilbert
STALS, Lambert
Teraji, T
Koizumi, S
Gheeraert, E
Issue Date: 2001
Citation: DIAMOND AND RELATED MATERIALS, 10(3-7). p. 439-443
Abstract: One year ago we published the first results on the electronic structure of the P-level in 1000 ppm PH3/CH4 doped {111}-oriented n-type diamond films, using the quasi-steady-state photocurrent technique (PC) and photothermal ionization spectroscopy (PTIS). In this work we have extended our measurements at various temperatures (4.2-77.4 K) to samples with various doping levels (100, 500 and 1000 ppm PH3/CH4). This allowed us to obtain more precise results for the electronic structure of the phosphorus defect in homoepitaxial n-type CVD diamond films, making use of the 155 meV LO-phonon to explain the oscillatory photoconductivity. These results are confirmed by the PTIS maxima and Fourier transform infra-red (FTIR) data. In addition we present first measurements on a 2000-ppm doped {100}-oriented sample. (C) 2001 Elsevier Science B.V. Ah rights reserved.
Notes: Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. Natl Inst Res Inorgan Mat, Adv Mat Res Ctr, Tsukuba, Ibaraki 3050044, Japan. CNRS, LEPES, F-38042 Grenoble, France.Haenen, K, Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2738
DOI: 10.1016/S0925-9635(00)00511-2
ISI #: 000168730600030
ISSN: 0925-9635
Category: A1
Type: Journal Contribution
Validation: ecoom, 2002
Appears in Collections: Research publications

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