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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2737

Title: A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation
Authors: DREESEN, Raf
CROES, Kristof
MANCA, Jean
DE CEUNINCK, Ward
DE SCHEPPER, Luc
Pergoot, A
Groeseneken, G
Issue Date: 2001
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 41(3). p. 437-443
Abstract: The hot-carrier degradation of lightly doped drain nMOSFETs is studied in detail. The degradation proceeds in a two-stage mechanism, involving first a series resistance increase and saturation, followed by a carrier mobility reduction. The degradation behaviour of a characteristic MOSFET parameter is modelled over the complete degradation range, from 0.02 up to more than 10%. Furthermore, the introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour, at normal operating conditions. (C) 2001 Elsevier Science Ltd. All rights reserved.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2737
DOI: 10.1016/S0026-2714(00)00225-0
ISI #: 000167966500012
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2002
Appears in Collections: Research publications

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