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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2736

Title: Reversible switching of the surface conductance of hydrogenated CVD diamond films
Authors: Cannaerts, M
NESLADEK, Milos
HAENEN, Ken
STALS, Lambert
DE SCHEPPER, Luc
Van Haesendonck, C
Issue Date: 2001
Publisher: WILEY-V C H VERLAG GMBH
Citation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 186(2). p. 235-240
Abstract: Chemical vapor deposited (CVD) diamond films have a controversial history regarding their surface electronic properties. Hydrogenation is known to induce a p-type conductive surface laver. which is not present on non-hydrogenated samples. The enhanced surface conductance can decrease significantly after annealing under high vacuum conditions at as low as 200 degreesC (a temperature which is sufficiently low to ensure that the hydrogen termination remains intact). Although the hydrogen is necessary for the surface conductance, the surface can be made poorly conductive without removing the hydrogen termination. We have performed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to better understand the origin of the enhanced surface conductance. Our STS experiments confirm that hydrogenation induces the appearance of a conductive surface laver. which can change considerably after high vacuum annealing. In this paper. we will discuss the conditions under which the surface conductivity can be restored. In particular we study the conductance changes during plasma hydrogenation and after exposing it to atmospheric conditions. Topographical STM scans confirm that the surface structure is not altered at low annealing temperatures.
Notes: Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium.Cannaerts, M, Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, Celestijnenlaan 200 D, B-3001 Louvain, Belgium.
URI: http://hdl.handle.net/1942/2736
DOI: 10.1002/1521-396X(200108)186:2<235::AID-PSSA235>3.0.CO;2-Q
ISI #: 000170435000010
ISSN: 0031-8965
Category: A1
Type: Journal Contribution
Validation: ecoom, 2002
Appears in Collections: Research publications

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