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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2735

Title: High-resolution in-situ study of gold electromigration: test time reduction
Authors: CROES, Kristof
DREESEN, Raf
MANCA, Jean
DE CEUNINCK, Ward
DE SCHEPPER, Luc
Tielemans, L
Van der Wel, P
Issue Date: 2001
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442
Abstract: The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
Notes: Mat Res Inst, B-3590 Diepenbeek, Belgium. Xpeqt, B-3980 Tessenderlo, Belgium. Philips Semicond, NL-6539 AE Nijmegen, Netherlands.Croes, K, Mat Res Inst, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2735
ISI #: 000171384900029
ISSN: 0026-2714
Category: A1
Type: Journal Contribution
Validation: ecoom, 2002
Appears in Collections: Research publications

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