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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/26540

Title: Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer
Authors: Salome, Pedro M. P.
Vermang, Bart
Ribeiro-Andrade, Rodrigo
Teixeira, Jennifer P.
Cunha, Jose M. V.
Mendes, Manuel J.
Haque, Sirazul
Borme, Jerome
Aguas, Hugo
Fortunato, Elvira
Martins, Rodrigo
Gonzalez, Juan C.
Leitao, Joaquim P.
Fernandes, Paulo A.
Edoff, Marika
Sadewasser, Sascha
Issue Date: 2018
Publisher: WILEY
Citation: ADVANCED MATERIALS INTERFACES, 5(2) (Art N° 1701101)
Abstract: Thin film solar cells based in Cu(In,Ga)Se-2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.
Notes: [Salome, Pedro M. P.; Ribeiro-Andrade, Rodrigo; Cunha, Jose M. V.; Borme, Jerome; Fernandes, Paulo A.; Sadewasser, Sascha] Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. [Salome, Pedro M. P.; Teixeira, Jennifer P.; Leitao, Joaquim P.; Fernandes, Paulo A.] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal. [Vermang, Bart] Univ Hasselt Partner Solliance, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium. [Vermang, Bart] Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Vermang, Bart] Imomec Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Ribeiro-Andrade, Rodrigo; Gonzalez, Juan C.] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil. [Cunha, Jose M. V.; Mendes, Manuel J.; Haque, Sirazul; Aguas, Hugo; Fortunato, Elvira; Martins, Rodrigo] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT i3N, P-2829516 Caparica, Portugal. [Cunha, Jose M. V.; Mendes, Manuel J.; Haque, Sirazul; Aguas, Hugo; Fortunato, Elvira; Martins, Rodrigo] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal. [Fernandes, Paulo A.] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, Rua Dr Antonio Bernardino Almeida 431, P-4200072 Oporto, Portugal. [Edoff, Marika] Uppsala Univ, Angstrom Solar Ctr, Angstrom Lab, Solid State Elect, SE-75121 Uppsala, Sweden.
URI: http://hdl.handle.net/1942/26540
DOI: 10.1002/admi.201701101
ISI #: 000423173800013
ISSN: 2196-7350
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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