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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/26444

Title: Surface Passivation of CIGS Solar Cells Using Gallium Oxide
Authors: Garud, Siddhartha
Gampa, Nikhil
Allen, Thomas G.
Kotipalli, Ratan
Flandre, Denis
Batuk, Maria
Hadermann, Joke
Meuris, Marc
Poortmans, Jef
Smets, Arno
Vermang, Bart
Issue Date: 2018
Citation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215(7) (Art N° 1700826)
Abstract: This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Notes: Vermang, B (reprint author), IMOMEC Partner Solliance, Imec Div, B-3590 Hasselt, Belgium, Hasselt Univ, Fac Engn Technol, B-3590 Hasselt, Belgium. bart.vermang@uhasselt.be
URI: http://hdl.handle.net/1942/26444
DOI: 10.1002/pssa.201700826
ISI #: 000430128500015
ISSN: 1862-6300
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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