Document Server@UHasselt >
Research >
Research publications >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/26387

Title: Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells
Authors: Cho, Jinyoun
Debucquoy, Maarten
Payo, Maria Recaman
Malik, Shuja
Filipic, Miha
Radhakrishnan, Hariharsudan Sivaramakrishnan
Bearda, Twan
Gordon, Ivan
Szlufcik, Jozef
Poortmans, Jef
Issue Date: 2017
Publisher: Elsevier Science BV
Citation: Preu, Ralf (Ed.). 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, Elsevier Science BV,p. 842-850
Series/Report: Energy Procedia
Series/Report no.: 124
Abstract: Eliminating a doping process could be an effective way to reduce the production cost of c-Si cells. However, in absence of highly doped Si, the formation of a high quality contact is not straightforward. The lack of field-effect passivation from a lowly doped region can lead to a high recombination current density at the contacts (J(0,metal)) and moreover, contact resistivity (rho(c)) typically increases when doping level is decreasing. In this work we focus on reducing the contact resistivity of an electron-selective contact for doping-free cells. Although the effect of low work function metals (LWMs) in combination with an i-a-Si:H layer has already been reported, the synergy effect of a LWM and a MIS (Metal-Insulator-Semiconductor) contact structure on top of the ia-Si:H has not been reported yet. Here, we demonstrate a new ATOM (i-a-Si:H / TiOX / low workfunction metal) contact structure as an electron-selective contact using an i-a-Si:H layer, a TiOX interfacial layer and Ca (Phi 2.9eV) without requiring an additional n(+) doping process. The addition of TiOX in between the i-a-Si:H layer and the Ca decreases the pc by about 2 orders of magnitude. Despite of increased J(0,metal) due to e-beam processing of TiOX, the Ca based ATOM contact increases the potential max efficiency up to 25 %. To the best of our knowledge, this is the first demonstration of an electron-selective contact comprising a low work function metal, an interfacial TiOX and an i-a-Si:H passivation layer. This type of contact could be a promising route for the optimization of doping-free cells (C) 2017 The Authors. Published by Elsevier Ltd.
Notes: [Cho, Jinyoun; Poortmans, Jef] Katholieke Univ Leuven, ESAT Dept, B-3001 Leuven, Belgium. [Cho, Jinyoun; Debucquoy, Maarten; Payo, Maria Recaman; Malik, Shuja; Filipic, Miha; Radhakrishnan, Hariharsudan Sivaramakrishnan; Bearda, Twan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] Imec, Kapeldreef 75, B-3001 Leuven, Belgium. [Poortmans, Jef] Univ Hasselt, Martelarenlaan 42, B-3500 Hasselt, Belgium.
URI: http://hdl.handle.net/1942/26387
DOI: 10.1016/j.egypro.2017.09.356
ISI #: 000426791600114
ISSN: 1876-6102
Category: C1
Type: Proceedings Paper
Appears in Collections: Research publications

Files in This Item:

Description SizeFormat
Published version1.36 MBAdobe PDF

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.