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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/25713

Title: Modelling of Cu2ZnSnSe4-CdS-ZnO thin film solar cell
Authors: Ben Messaoud, Khaled
Brammertz, Guy
Buffiere, Marie
Oueslati, Souhaib
El Anzeery, Hossam
Meuris, Marc
Amlouk, Mosbah
Poortmans, Jef
Issue Date: 2017
Citation: MATERIALS RESEARCH EXPRESS, 4(11), p. 1-13 (Art N° 116403)
Abstract: We present a device model for the Cu2ZnSnSe4-CdS-ZnO solar cell with a total area efficiency of 9.7% reported in 2013 (Brammertz et al 2013 Appl. Phys. Lett. 103 163904). The simulations were performed using SCAPS program. In the device model, we reproduce rigorously the full range of layers and device properties estimated experientially using various characterization techniques. We include in the device model barriers at the back contact and the absorber/buffer interfaces, the photo-doped CdS buffer layer and defect states at the CdS/ZnO interface. A perfect match with the electrical behaviors of the solar cell are obtained, including light and dark current voltage, quantum efficiency, open circuit voltage (VOC) versus temperature and capacitance measurements. We show as well that interface recombination does not have an impact on the VOC deficit but partially reduces the short circuit current and the fill factor and that the main electrical limitations are due to the presence of tail states and electrostatic potential fluctuations in the CZTSe material leading to a decrease in the band gap and an increase of radiative recombination by tow orders.
Notes: [Ben Messaoud, Khaled; Oueslati, Souhaib; ElAnzeery, Hossam] King Abdulaziz City Sci & Technol, King Abullah Rd 6086, Riyadh 11442, Saudi Arabia. [Ben Messaoud, Khaled; Buffiere, Marie; Oueslati, Souhaib; ElAnzeery, Hossam; Poortmans, Jef] IMEC Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Brammertz, Guy; Meuris, Marc] IMEC Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Brammertz, Guy; Meuris, Marc; Poortmans, Jef] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Buffiere, Marie; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Ben Messaoud, Khaled; Oueslati, Souhaib; Amlouk, Mosbah] Fac Sci Tunis, Phys Dept, El Manar 2092, Tunisia. [ElAnzeery, Hossam] Nile Univ, Microelect Syst Design Dept, Cairo, Egypt. [Buffiere, Marie] Qatar Fdn, Qatar Environm & Energy Res Inst, Doha, Qatar.
URI: http://hdl.handle.net/1942/25713
DOI: 10.1088/2053-1591/aa94f3
ISI #: 000414483400002
ISSN: 2053-1591
Category: A1
Type: Journal Contribution
Appears in Collections: Research publications

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