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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2513

Title: Dielectric measurements on oxidized and hydrogenated chemical vapor deposited diamond films
Authors: HAENEN, Ken
Rouleau, JF
Goyette, J
STALS, Lambert
Bose, TK
Issue Date: 2002
Citation: JOURNAL OF APPLIED PHYSICS, 91(10). p. 6670-6674
Abstract: The influence of oxidation, hydrogenation, and annealing on the dielectric properties of microwave plasma enhanced chemical vapor deposited diamond films was measured in the 45 MHz-20 GHz range using an open-ended coaxial probe. A dielectric response was detected around 10(8)-10(9) Hz for the hydrogenated samples, in contrast to the oxidized films, which showed no response in that frequency range. The amplitude and position of the detected response were clearly dependent on the sample quality and the state of the surface. Fitting of the experimental data to the Cole-Cole expression for dielectric relaxation showed a near-Debye behavior of the dielectric permittivity. We propose that the dielectric response is a result of two-dimensional plasmons, corresponding with a hole concentration of similar to10(13) cm(-2) at the diamond surface, induced by the hydrogen termination. Analogous to the well-known hydrogen-induced surface conductivity, the dielectric signal disappeared after annealing the diamond films at 200 degreesC. (C) 2002 American Institute of Physics.
Notes: Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Univ Quebec, Inst Rech Hydrogene, Dept Phys, Trois Rivieres, PQ G9A 5H7, Canada.Haenen, K, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/2513
ISI #: 000175572500062
ISSN: 0021-8979
Category: A1
Type: Journal Contribution
Validation: ecoom, 2003
Appears in Collections: Research publications

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